Recent Computer Application to Dielectric Measurement
نویسندگان
چکیده
منابع مشابه
Application of Scanning Nonlinear Dielectric Microscopy to Measurement of Dopant Profiles in Transistors
This paper presents results obtained when using scanning nonlinear dielectric microscopy (SNDM) to measure dopant profiles in transistors. Secondary ion mass spectrometry (SIMS) measurements of an epitaxial multilayer film on a standard sample and SNDM measurements of the sample surface showed that it was possible to obtain a uniform concentration region with a thickness of approximately 4–5 μm...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1996
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1990.116.6_481